Plasmon recombination in narrowgap HgTe quantum wells

TL;DR

This paper investigates the behavior of two-dimensional plasmons in narrow-gap HgTe quantum wells, revealing a near-linear dependence of plasmon frequencies on wave vector and calculating associated recombination rates.

Contribution

It provides the first detailed calculation of plasmon dispersion laws considering spatial dispersion in narrow-gap HgTe quantum wells and analyzes their impact on electron-hole recombination.

Findings

Plasmon frequencies depend nearly linearly on wave vector at the band gap energy.

The critical concentration for carrier recombination via plasmons is significantly affected.

Recombination rates with plasmon emission are quantitatively calculated.

Abstract

The dispersion laws of two-dimensional plasmons in narrow-gap HgTe/CdHgTe quantum wells are calculated taking into account the spatial dispersion of the electron susceptibility. At the energy scale of the band gap the dependence of plasmon frequencies on the wave vector is shown to be close to linear that changes significantly the critical concentration of noneqilibrium electron-hole gas corresponding to "switching-on" the carrier recombination with plasmon emission. The recombination rates with the plasmon emission have been calculated.