Comparison of coherent phonon generation by electronic and ionic Raman scattering in LaAlO$_3$
Martin J. Neugebauer, Dominik M. Juraschek, Matteo Savoini, Pascal, Engeler, Larissa Boie, Elsa Abreu, Nicola A. Spaldin, Steven L. Johnson

TL;DR
This study compares ionic and electronic Raman scattering in LaAlO₃, revealing ionic Raman scattering can dominate in wide band-gap insulators and identifying resonance conditions and competing channels affecting phonon coherence.
Contribution
It provides the first direct comparison of ionic and electronic Raman scattering mechanisms in LaAlO₃ using time-resolved spectroscopy, highlighting the dominance of ionic Raman scattering under certain conditions.
Findings
Resonance peak in phonon amplitude when pump matches infrared-active mode.
Ionic Raman scattering can dominate over electronic scattering in wide band-gap insulators.
Evidence of competing scattering channels at high fluences affecting phonon amplitude.
Abstract
In ionic Raman scattering, infrared-active phonons mediate a scattering process that results in the creation or destruction of a Raman-active phonon. This mechanism relies on nonlinear interactions between phonons and has in recent years been associated with a variety of emergent lattice-driven phenomena in complex transition-metal oxides, but the underlying mechanism is often obscured by the presence of multiple coupled order parameters in play. Here, we use time-resolved spectroscopy to compare coherent phonons generated by ionic Raman scattering with those created by more conventional electronic Raman scattering on the nonmagnetic and non-strongly-correlated wide band-gap insulator LaAlO. We find that the oscillatory amplitude of the low-frequency Raman-active mode exhibits a sharp peak when we tune our pump frequency into resonance with the high-frequency infrared-active…
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