2D-MoS2 with Narrowest Excitonic Linewidths Grown by Flow-Less Direct Heating of Bulk Powders

TL;DR

This paper introduces a simple, cost-effective method for synthesizing high-quality monolayer MoS2 with narrow excitonic linewidths, enabling detailed strain studies and potential scalable production of 2D materials.

Contribution

The authors present a direct heating technique for growing high-quality monolayer MoS2 without complex equipment, allowing for strain analysis and high uniformity in excitonic properties.

Findings

Room-temperature excitonic linewidths narrower than most existing methods.

Strain induces measurable red-shifts in excitonic and Raman peaks.

Method enables direct comparison of flat and strained 2D-MoS2 within the same growth batch.

Abstract

Developing techniques for high-quality synthesis of mono and few-layered 2D materials with lowered complexity and cost continues to remain an important goal, both for accelerating fundamental research and for applications development. We present the simplest conceivable technique to synthesize micrometer-scale single-crystal triangular monolayers of MoS2, i.e. by direct heating of bulk MoS2 powder onto proximally-placed substrates. Room-temperature excitonic linewidth values of our samples are narrower and more uniform than those of 2D-MoS2 obtained by most other techniques reported in literature, and comparable to those of ultraflat h-BN-capped mechanically exfoliated samples, indicative of their high quality. Feature-rich Raman spectra absent in samples grown or obtained by most other techniques, also stand out as a testament of the high quality of our samples. A contact-growth mode facilitates direct growth of crystallographically-strained circular samples, which allows us to directly compare the optoelectronic properties of flat vs. strained growth from the same growth runs. Our method allows, for the first time, to quantitatively compare the impact of strain on excitonic and Raman peak positions on identically-synthesized 2D-MoS2. Strain leads to average Red-shifts of ~ 30 meV in the A-exciton position, and ~ 2 cm-1 in the E12g Raman peak in these samples. Our findings open-up several new possibilities that expand 2D material research. By eliminating the need for carrier gas flow, mechanical motion or chemical reactions, our method can be either miniaturized for substantially low-cost, high-quality scientific research or potentially scaled-up for mass-production of 2D crystals for commercial purposes. Moreover, we believe this technique can also be extended to other transition metal dichalcogenides and other layered materials.