Improvement of HRS Variability in OxRRAM by Tailored Metallic Liner

TL;DR

This paper introduces a metallic liner in OxRRAM devices to reduce resistance variability and enhance thermal stability, demonstrating improved device performance over standard structures.

Contribution

The study presents a novel metallic liner integration that significantly improves stability and reduces variability in OxRRAM devices, supported by a conductive filament model.

Findings

Enhanced stability of resistive states in OxRRAM

Reduced variability in resistance states

Improved thermal endurance

Abstract

In this work, we propose a novel integration in order to significantly reduce the High Resistance State vari-ability and to improve thermal stability in Oxide-based Resistive Random Access Memory (OxRRAM) devices. A novel device featuring a metallic liner, acting as a parallel resistance, is presented. To assess the effect of this solution, we compare the results with a standard OxRRAM cell structure. A very good stability of the resistive states, both in endurance and temperature, is highlighted and explained thanks to a conductive fila-ment based model.