Doping-controlled transition from excitonic insulator to semimetal in Ta$_2$NiSe$_5$
L. Chen, T. T. Han, C. Cai, Z. G. Wang, Y. D. Wang, Z. M. Xin, and Y., Zhang

TL;DR
This study demonstrates a doping-controlled transition from an excitonic insulator to a semimetal in Ta$_2$NiSe$_5$, revealing BCS-BEC crossover behavior and enabling precise tuning of electronic properties via potassium deposition.
Contribution
It provides the first detailed experimental observation of doping-induced EI-to-semimetal transition in Ta$_2$NiSe$_5$ using ARPES, unveiling BCS-BEC crossover phenomena.
Findings
Doping induces a transition from excitonic insulator to semimetal in Ta$_2$NiSe$_5$.
Two sequential phase transitions related to phase decoherence and pair-breaking.
Band structure and excitonic binding energy can be precisely tuned via alkali-metal deposition.
Abstract
Excitonic insulator (EI) is an intriguing insulating phase of matter, where electrons and holes are bonded into pairs, so called excitons, and form a phase-coherent state via Bose-Einstein Condensation (BEC). Its theoretical concept has been proposed several decades ago, but the followed research is very limited, due to the rare occurrence of EI in natural materials and the lack of manipulating method of excitonic condensation. In this paper, we report the realization of a doping-controlled EI-to-semi-metal transition in TaNiSe using - potassium deposition. Combining with angle-resolved photoemission spectroscopy (ARPES), we delineate the evolution of electronic structure through the EI transition with unprecedented precision. The results not only show that TaNiSe (TNS) is an EI originated from a semi-metal non-interacting band structure, but also resolve…
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