Ultrafast current and field driven domain-wall dynamics in van der Waals antiferromagnet MnPS3

TL;DR

This study demonstrates ultrafast control of magnetic domain walls in 2D van der Waals antiferromagnet MnPS3 using magnetic fields and electric currents, revealing edge-dependent dynamics and potential for ultrathin device applications.

Contribution

It shows that magnetic domain walls in MnPS3 can be manipulated at high speeds via external stimuli, with edge structure playing a crucial role in the dynamics, advancing 2D antiferromagnetic spintronics.

Findings

Domain walls reach speeds up to 1500 m/s with magnetic fields.

Electric currents induce domain wall motion in specific edge configurations.

Edge termination determines the ease of domain wall displacement.

Abstract

The discovery of magnetism in two-dimensional (2D) van der Waals (vdW) materials has flourished a new endeavour of fundamental problems in magnetism as well as potential applications in computing, sensing and storage technologies. Of particular interest are antiferromagnets, which due to their intrinsic antiferromagnetic exchange coupling show several advantages in relation to ferromagnets such as robustness against external magnetic perturbations. This property is one of the cornerstones of antiferromagnets and implies that information stored in antiferromagnetic domains is invisible to applied magnetic fields preventing it from being erased or manipulated. Here we show that, despite this fundamental understanding, the magnetic domains of recently discovered vdW MnPS3 antiferromagnet can be controlled via external magnetic fields and currents. We realize ultrafast domain-wall dynamics with velocities up to 1500 m/s and 3000 m/s respectively to a broad range of fields and current densities. Both domain wall dynamics are determined by the edge terminations which generated uncompensated spins following the underlying symmetry of the honeycomb structure. We find that edge atoms belonging to different magnetic sublattices function as geometrical constrictions preventing the displacement of the wall, whereas having atoms of the same sublattice at both edges of the material allows for the field-driven domain wall motion which is only limited by the spin-flop transition of the antiferromagnet beyond 25 T. Conversely, electric currents can induce motion of domain walls in most of the edges except those where the two sublattices are present at the borders (e.g. armchair edges). Our results indicate that the implementation of 2D vdW antiferromagnets in real applications requires the engineering of the layer edges which enables an unprecedented functional feature in ultrathin device platforms.