Tip Avalanche Photodiode -- A new generation Silicon Photomultiplier based on non-planar technology
Eugen Engelmann, Wolfgang Schmailzl, Peter Iskra, Florian Wiest, Elena, Popova, Sergey Vinogradov

TL;DR
This paper introduces the Tip Avalanche Photodiode (TAPD), a novel silicon photomultiplier design utilizing non-planar tip-like electrodes to enhance efficiency, spectral range, and recovery time, surpassing current SiPM limitations.
Contribution
The work presents a new non-planar electrode configuration for SiPMs that improves geometric efficiency, photon detection efficiency, and dynamic range compared to traditional designs.
Findings
Geometric efficiency above 80% at 15μm pitch
Peak photon detection efficiency of 73% at 600nm
Recovery time below 4ns
Abstract
The Silicon Photomultiplier (SiPM) is a mature photodetector concept that is applied in a variety of applications ranging from medical imaging to automotive LiDAR systems. Over the last few years, improvements of the sensor performance are gradually approaching to a saturation. In this work we present our new concept to overcome the intrinsic limitations of planar configurations of electrodes. Our non-planar technology is based on focusing and enhancing the electric fields by tip-like electrodes. The shape of the electric field and the lack of typical micro-cell edges, allows us to exclude cell separation boundaries and eliminate dead space around active cell areas. Our design provides a high-density micro-cell layout with a high geometric efficiency. It resolves the well-known trade-off between the detection efficiency and the dynamic range. The first "Tip Avalanche Photodiode" (TAPD)…
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