1.5 {\mu}m Epitaxially Regrown Photonic Crystal Surface Emitting Laser Diode
Zijun Bian, Katherine J. Rae, Adam F. McKenzie, Ben C. King, Nasser, Babazadeh, Guangrui Li, Jonathan R. Orchard, Neil D. Gerrard, Stephen Thoms,, Donald A. McLaren, Richard J. E. Taylor, David Childs, Richard A. Hogg
TL;DR
This paper reports the development of an InP-based epitaxially regrown photonic crystal surface emitting laser diode that operates in quasi-continuous wave conditions at 1523 nm, demonstrating a novel fabrication approach.
Contribution
It introduces a new epitaxial regrowth technique for photonic crystal surface emitting lasers on InP substrates, enabling lasing at 1523 nm in quasi-CW mode.
Findings
Lasing achieved at 1523 nm
Operates in quasi-CW conditions
Uses epitaxial regrowth on InP-based photonic crystal
Abstract
We present an InP-based epitaxially regrown photonic crystal surface emitting laser diode, lasing in quasi- CW conditions at 1523nm.
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