Probing the Phonon Mean Free Paths in Dislocation Core by Molecular Dynamics Simulation
Yandong Sun, Yanguang Zhou, Ming Hu, G. Jeffrey Snyder, Ben Xu, and, Wei Liu

TL;DR
This paper extends a phonon transport model to explicitly analyze how dislocation cores affect phonon mean free paths, revealing high-frequency phonons are strongly scattered in these regions, which advances understanding of thermal conductivity in defective materials.
Contribution
The study introduces an extended 1D McKelvey-Shockley phonon BTE method for inhomogeneous materials, enabling explicit analysis of phonon MFPs near dislocation cores.
Findings
Phonon MFPs are significantly reduced in dislocation cores.
High-frequency phonons are more likely to be scattered in dislocation regions.
The method aligns with analytical models for phonon-dislocation interactions.
Abstract
Thermal management is extremely important for designing high-performance devices. The lattice thermal conductivity of materials is strongly dependent on the structural defects at different length scales, particularly point defects like vacancies, line defects like dislocations, and planar defects such as grain boundaries. Traditionally, the McKelvey-Shockley phonon Boltzmann's transport equation (BTE) method combined with molecular dynamics simulations has been widely used to evaluate the phonon mean free paths (MFPs) in defective systems. However, this method can only provide the aggregate MFPs of the whole sample. It is, therefore, challenging to extract the MFPs in the different regions with different thermal properties. In this study, the 1D McKelvey-Shockley phonon BTE method was extended to model inhomogeneous materials, where the effect of defects on the phonon MFPs is explicitly…
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