Kagome quantum anomalous Hall effect with high Chern number and large band gap

TL;DR

This paper proposes new kagome ferromagnetic monolayers and heterostructures that realize the quantum anomalous Hall effect with high Chern number |C|=3 and large band gaps, promising for low-power spintronic applications.

Contribution

Introduction of three novel stable kagome ferromagnets and heterostructures that exhibit high Chern number QAHE with sizable band gaps and elevated Curie temperatures.

Findings

Monolayers have band gaps of 63-77 meV and Curie temperatures of 42-51 K.

Heterostructure Co3Sn3Se2/MoS2 enhances Curie temperature to 60 K with a band gap of about 60 meV.

Bilayer Co6Sn5Se4 is a half-metal with a flat plateau in anomalous Hall conductivity at |C|=3.

Abstract

Due to the potential applications in the low-power-consumption spintronic devices, the quantum anomalous Hall effect (QAHE) has attracted tremendous attention in past decades. However, up to now, QAHE was only observed experimentally in topological insulators with Chern numbers C= 1 and 2 at very low temperatures. Here, we propose three novel two-dimensional stable kagome ferromagnets Co3Pb3S2, Co3Pb3Se2and Co3Sn3Se2that can realize QAHE with high Chern number of |C|=3. Monolayers Co3Pb3S2, Co3Pb3Se2 and Co3Sn3Se2 possess the large band gap of 70, 77 and 63 meV with Curie temperature TC of 51, 42 and 46 K, respectively. By constructing a heterostructure Co3Sn3Se2/MoS2, its TC is enhanced to 60 K and the band gap keeps about 60 meV due to the tensile strain of 2% at the interface. For the bilayer compound Co6Sn5Se4, it becomes a half-metal, with a relatively flat plateau in its anomalous Hall conductivity corresponding to |C| = 3 near the Fermi level. Our results provide new topological nontrivial systems of kagome ferromagnetic monolayers and heterostructrues possessing QAHE with high Chern number |C| = 3 and large band gaps.