Radiation Testing of Optical and Semiconductor Components for Radiation-Tolerant LED Luminaires

TL;DR

This paper investigates the effects of gamma-ray and proton irradiation on optical and semiconductor components to guide the development of radiation-tolerant LED luminaires for CERN tunnels.

Contribution

It provides experimental data on radiation effects on optical materials and semiconductor components used in rad-hard LED lighting systems.

Findings

Gamma-ray doses up to 100 kGy cause specific degradation in optical materials.

Proton irradiation affects the performance of Si and SiC semiconductor devices.

Physical degradation mechanisms are identified for each tested component.

Abstract

An irradiation campaign was conducted to provide guidance in the selection of materials and components for the radiation hardening of LED lights for use in CERN accelerator tunnels. This work describes the effects of gamma-rays on commercial-grade borosilicate, fused quartz, polymethylmethacrylate, and polycarbonate samples up to doses of 100 kGy, to qualify their use as optical materials in rad-hard LED-based luminaires. In addition, a Si bridge rectifier and a SiC Junction Barrier Schottky diode for use in power supplies of rad-hard LED lighting systems are tested using 24 GeV/c protons. The physical degradation mechanisms are discussed for each element.