Optical and electronic properties in amorphous BaSnO3 thin films

TL;DR

This study investigates the optical and electronic properties of amorphous BaSnO3 thin films, revealing that annealing reduces defect levels while maintaining the amorphous structure, which is promising for transparent electronic devices.

Contribution

It provides new insights into the properties of amorphous BaSnO3 thin films and how annealing affects defect levels without crystallization.

Findings

Higher annealing temperatures suppress defect levels.

Amorphous BaSnO3 maintains its structure after annealing.

Potential for use in transparent electronic devices.

Abstract

Wide-bandgap perovskite stannates are of interest for the emergent all-oxide transparent electronic devices due to their unparalleled room temperature electron mobility. Considering the advantage of amorphous material in integrating with non-semiconductor platforms, we herein reported the optical and electronic properties in the prototypical stannate, amorphous barium stannate (BaSnO3) thin films, which were deposited at room temperature and annealed at various temperatures. Despite remaining amorphous status, with increasing the annealing temperature, the defect level within amorphous BaSnO3 thin films could be suppressed.