Epitaxy of new layered materials: 2D chalcogenides and challenges of weak van der Waals interactions

TL;DR

This paper reviews the epitaxial growth of 2D van der Waals materials, especially chalcogenides, highlighting challenges and prospects for integrating these materials into semiconductor manufacturing.

Contribution

It provides a comprehensive understanding of epitaxial growth processes for van der Waals materials, aiming to enable large-area, defect-free integration in industry.

Findings

Epitaxial growth techniques for 2D chalcogenides are advancing.

Challenges remain in achieving large-area, single-crystalline, defect-free films.

Integration into semiconductor industry requires overcoming manufacturing process barriers.

Abstract

The application of new materials in nanotechnology opens new perspectives and enables ground-breaking innovations. Two-dimensional van der Waals materials and more specific, 2D chalcogenides are a promising class of new materials awaiting their usage in the semiconductor industry. However, the integration of van der Waals materials relying on industry-compatible manufacturing processes is still a major challenge. This is currently restricting the application of these new materials to the research laboratories environment only. The large-area and single-crystalline growth of van der Waals materials is one of the most important requirements to meet the challenging demands implied by the semiconductor industry. This review contributes to a more generalized understanding on the integration of van der Waals materials - and in more specific 2D chalcogenides - through the growth process of epitaxy. This, can pursue further the aspiration of large-area, single-crystalline and defect-free epitaxial integration of (quasi) van der Waals homo- and heterostructures into the great world of the semiconductor industry.