On-chip erbium-doped lithium niobate microdisk lasers

TL;DR

This paper reports the fabrication and demonstration of erbium-doped lithium niobate microdisk lasers with high quality factors, achieving low-threshold stimulated emission at 1531.6 nm, advancing integrated photonic light sources.

Contribution

It introduces a batch fabrication process for erbium-doped lithium niobate microdisks with high Q-factors and demonstrates their lasing capabilities at telecom wavelengths.

Findings

Lasing threshold as low as 400 μW.

Conversion efficiency of 3.1×10^{-4}%.

Successful demonstration of on-chip erbium-doped lithium niobate lasers.

Abstract

Erbium-doped lithium niobate high-Q microdisk cavities were fabricated in batches by UV exposure, inductively coupled plasma reactive ion etching and chemo-mechanical polishing. The stimulated emission at 1531.6 nm was observed under the pump of a narrow-band laser working at 974 nm in erbium-doped lithium niobate microdisk cavity with threshold down to 400 {\mu}W and a conversion efficiency of 3.1{\times}10^{-4} %, laying the foundation for the LNOI integrated light source research.