Magnetic and Electronic Switch in Metal Intercalated Two-Dimensional GeP$_3$
D. P. de A. Deus, I. S. S. de Oliveira, J. B. Oliveira, W. L. Scopel,, R. H. Miwa

TL;DR
This study uses first-principles calculations to demonstrate that intercalating Cr atoms in 2D GeP$_3$ can switch its magnetic state from antiferromagnetic to ferromagnetic under strain, also inducing metallic and spin-polarized electronic channels.
Contribution
It reveals a new method to control magnetic and electronic properties in 2D materials through atomic intercalation and mechanical strain.
Findings
Cr intercalation stabilizes in the vdW gap of GeP$_3$ bilayers.
Mechanical strain can switch magnetic order from antiferromagnetic to ferromagnetic.
Cr doped GeP$_3$ systems exhibit strain-induced spin-polarized metallic channels.
Abstract
Intercalation of foreign atoms in two dimensional hosts has been considered a quite promising route in order to engineer the electronic, and magnetic properties in 2D plataforms. In the present study, we performed a first-principles theoretical investigation of the energetic stability, and the magnetic/electronic properties of 2D GeP doped by Cr atoms. Our total energy results reveal the formation of thermodynamically stable Cr doped GeP bilayer [(GeP)], characterized by interstitial Cr atoms lying in the van der Waals (vdW) gap between (GeP) [(GeP)]. We show that the ground state row-wise antiferromagnetic (RW-AFM) phase of (GeP) can be tuned to a ferromagnetic (FM) configuration upon compressive mechanical strain (), CrCr. By considering…
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