The anisotropic quasi-static permittivity of single-crystal beta-Ga2O3

TL;DR

This study measures the anisotropic permittivity of beta-Ga2O3 crystals in the terahertz range using spectroscopy, providing key parameters for high-frequency electronic device applications.

Contribution

It provides the first detailed terahertz permittivity measurements of beta-Ga2O3, aligning with previous RF and infrared data, and clarifies its dielectric properties.

Findings

No significant frequency dispersion observed in the measured range.

Permittivity principal directions aligned with crystallographic axes.

Results agree with RF and infrared measurements.

Abstract

The quasi-static anisotropic permittivity parameters of electrically insulating gallium oxide (beta-Ga2O3) were determined by terahertz spectroscopy. Polarization-resolved frequency domain spectroscopy in the spectral range from 200 GHz to 1 THz was carried out on bulk crystals along different orientations. Principal directions for permittivity were determined along crystallographic axes c, and b, and reciprocal lattice direction a*. No significant frequency dispersion in the real part of dielectric permittivity was observed in the measured spectral range. Our results are in excellent agreement with recent radio-frequency capacitance measurements as well as with extrapolations from recent infrared measurements of phonon mode and high frequency contributions, and close the knowledge gap for these parameters in the terahertz spectral range. Our results are important for applications of beta-Ga2O3 in high-frequency electronic devices