Properties of amorphous CoZr(RE) (RE=Gd, Sm, Dy) films with various uniaxial anisotropies, prepared by a new process

TL;DR

This study investigates the magnetic anisotropy properties of amorphous CoZr(RE) films with different rare earth elements, revealing how the choice of RE influences the anisotropy direction and magnetic behavior.

Contribution

It introduces a new sputtering process to control uniaxial anisotropy in amorphous CoZr(RE) films based on RE type and concentration.

Findings

Gd substitution induces perpendicular anisotropy over a wide concentration range.

CoFeZrGd and CoZrGdSm films develop well-defined perpendicular anisotropy.

CoZrGdDy films show simultaneous perpendicular and in-plane anisotropies.

Abstract

If a DC magnetic field is applied parallel to the plane of amorphous CoZr(RE) thin films during sputter depositing, a uniaxial anisotropy is formed the direction of which depends upon the choice of RE substituted and its concentration. When RE = Gd a perpendicular anisotropy K, forms over a large concentration range, a spin reorientation process being at the origin of the process. A well-defined K, is developed also in CoFeZrGd and CoZrGdSm films. CoZrGdDy films exhibit simultaneously a perpendicular and an in-plane uniaxial anisotropy. The related magnetization process and domain structures are quite peculiar.