Ternary Hypervalent Silicon Hydrides via Lithium at High Pressure
Tianxiao Liang, Zihan Zhang, Xiaolei Feng, Haojun Jia, Chris J., Pickard, Simon A. T. Redfern, and Defang Duan

TL;DR
This study explores how high-pressure hydrogenation stabilizes hypervalent silicon hydrides with lithium doping, revealing new anions and structures that could inform future hydrogen-rich material research.
Contribution
The paper reports the discovery of new hypervalent silicon hydride anions and structures stabilized under high pressure, expanding understanding of hydrogen-rich silicon compounds.
Findings
Identification of layered-SiH₅⁻ and SiH₆²⁻ anions.
Discovery of hydrogen-rich structures Li₃SiH₁₀ and Li₂SiH₆+δ.
High-pressure stabilization of novel silicon hydrides.
Abstract
Hydrogen is rarely observed as ligand in hypervalent species, however, we find that high-pressure hydrogenation may stabilise hypervalent hydrogen-rich materials. Focussing on ternary silicon hydrides via lithium doping, we find anions composed of hypervalent silicon with H ligands formed under high pressure. Our results reveal two new hypervalent anions: layered-SiH and tricapped trigonal prismatic SiH. These differ from octahedral SiH described in earlier studies. In addition, there are further hydrogen-rich structures LiSiH and LiSiH which may be stabilised at high pressure. Our work provides pointers to future investigations on hydrogen-rich materials.
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