The Fourier signatures of memristive hysteresis

TL;DR

This paper demonstrates experimentally that the Fourier signatures of memristive hysteresis can be used to distinguish memory effects from non-hysteretic responses, providing a new way to quantify and tune resistive memory systems.

Contribution

It introduces a method to identify and measure hysteresis in memristive systems using Fourier series coefficients, linking spectral features to memory content.

Findings

Fourier coefficients can distinguish hysteresis from linear responses.

Hysteresis measure depends on driving conditions.

Fourier spectrum can be tuned by excitation signals.

Abstract

While resistors with memory, sometimes called memristive elements (such as ReRAM cells), are often studied under conditions of periodic driving, little attention has been paid to the Fourier features of their memory response (hysteresis). Here we demonstrate experimentally that the hysteresis of memristive systems can be unambiguously distinguished from the linear or non-linear response of systems without hysteresis by the values of certain Fourier series coefficients. We also show that the Fourier series convergence depends on driving conditions, and introduce a measure of hysteresis. These results may be used to quantify the memory content of resistive memories, and tune their Fourier spectrum according to the excitation signal.