Interaction of electrons with acoustic phonons in AlN/GaN resonant tunnelling nanostructures at different temperatures

TL;DR

This paper develops a finite-temperature Green's function theory to analyze electron-acoustic phonon interactions in AlN/GaN nanostructures, revealing how temperature affects electronic spectra and phonon modes.

Contribution

It introduces the first theoretical model for electron-phonon interactions in nitride nanostructures at finite temperatures using Green's functions.

Findings

Calculated electron spectrum shifts due to electron-phonon interaction.

Determined dependence of electronic levels on potential barrier position.

Analyzed temperature effects on spectrum shifts and decay rates.

Abstract

The theory of the interaction of electrons with acoustic phonons in multilayer nitride-based AlN/GaN nanostructures was developed for the first time at $T\geqslant 0$ using the method of finite-temperature Green's functions and Dyson equation. Components of the Hamiltonian describing the system of electrons with acoustic phonons and the magnitudes of the electron spectrum shifts due to the electron-phonon interaction were obtained. Dependences of the electronic spectrum levels and spectrum of the acoustic phonons were found depending on the position of the internal potential barrier in the studied nanostructure. The temperature shifts of the electronic spectrum and decay rates were calculated for various values of temperature $T$.