Prediction of two-dimensional ferromagnetic ferroelectric VOF$_2$ monolayer
Hai-Peng You, Ning Ding, Jun Chen, Shuai Dong

TL;DR
This paper predicts a novel two-dimensional VOF2 monolayer that exhibits both intrinsic ferroelectricity and ferromagnetism, making it a promising candidate for high-performance magnetoelectric devices.
Contribution
The study introduces a new 2D VOF2 monolayer with the largest in-plane ferroelectric polarization and a robust ferromagnetic ground state, unlike other similar materials.
Findings
VOF2 monolayer has the largest in-plane ferroelectric polarization among VOX2 materials.
VOF2 monolayer exhibits a stable ferromagnetic ground state.
Provides a promising candidate for 2D multiferroic materials with high magnetoelectric performance.
Abstract
Nowadays, designing and searching for materials with multiple functional characteristics are the key to achieving high-performance electronic devices. Among many candidates, two-dimensional multiferroic materials have great potential to be applied in highly-integrated magnetoelectric devices, such as high-density non-volatile memories. Here, we predict a two-dimensional material VOF2 monolayer to possess intrinsic ferroelectric and ferromagnetic properties. The VOF monolayer own the largest in-plane ferroelectric polarization ( pC/m) in the family of VO (: halogen) oxyhalides. Different from other VO monolayers whose magnetic ground states are antiferromagnetic or noncollinear spiral textures, the VOF monolayer owns a robust ferromagnetic ground state, which is rare but highly desirable. Our theoretical prediction provides a good candidate and starting point…
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