Modulation of Landau levels and de Haas-van Alphen oscillation in magnetized graphene by uniaxial tensile strain/ stress

TL;DR

This paper theoretically investigates how uniaxial tensile strain affects Landau levels and de Haas-van Alphen oscillations in magnetized graphene, revealing the impact of strain-induced anisotropy on electronic properties.

Contribution

It introduces a theoretical analysis of how uniaxial tensile strain modifies Landau levels and quantum oscillations in magnetized graphene, considering anisotropic Fermi velocity effects.

Findings

Strain induces anisotropic Fermi velocity in graphene.

Strain alters the structure of Landau levels.

Strain affects de Haas-van Alphen oscillations.

Abstract

The strain engineering technique allows us to alter the electronic properties of graphene in various ways. Within the continuum approximation, the influences of strain result in the appearance of a pseudo-gauge field and modulated Fermi velocity. In this study, we investigate theoretically the effect of linear uniaxial tensile strain and/or stress, which makes the Fermi velocity anisotropic, on a magnetized graphene sheet in the presence of an applied electrostatic voltage. More specifically, we analyze the consequences of the anisotropic nature of the Fermi velocity on the structure Landau levels and de Haas - van Alphen (dHvA) quantum oscillation in the magnetized graphene sheet. The effect of the direction of the applied strain has also been discussed.