Twisted Bilayer Graphene IV. Exact Insulator Ground States and Phase Diagram
Biao Lian, Zhi-Da Song, Nicolas Regnault, Dmitri K. Efetov, and Ali Yazdani, B. Andrei Bernevig

TL;DR
This paper derives exact insulator ground states of twisted bilayer graphene's flat bands under Coulomb interactions, exploring various limits and symmetries, and connects these states to experimental observations of Chern insulators and phase transitions.
Contribution
It provides the first exact ground states for TBG flat bands across different limits, revealing the role of symmetries and perturbations in the phase diagram.
Findings
Exact Chern insulator ground states at various fillings.
Confirmation of experimental Chern insulators in TBG.
Prediction of phase transitions under magnetic field.
Abstract
We derive the exact insulator ground states of the projected Hamiltonian of magic-angle twisted bilayer graphene (TBG) flat bands with Coulomb interactions in various limits, and study the perturbations away from these limits. We define the (first) chiral limit where the AA stacking hopping is zero, and a flat limit with exactly flat bands. In the chiral-flat limit, the TBG Hamiltonian has a U(4)U(4) symmetry, and we find that the exact ground states at integer filling relative to charge neutrality are Chern insulators of Chern numbers , all of which are degenerate. This confirms recent experiments where Chern insulators are found to be competitive low-energy states of TBG. When the chiral-flat limit is reduced to the nonchiral-flat limit which has a U(4) symmetry, we find has exact ground states of Chern number…
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