Large magnetoresistance observed in {\alpha}-Sn/InSb heterostructures

TL;DR

This paper reports the epitaxial growth of high-quality {eta}-Sn films on InSb substrates, revealing an exceptionally large magnetoresistance exceeding 450,000%, with detailed analysis of its dependence on thickness, angle, and temperature.

Contribution

It introduces a novel epitaxial growth method for {eta}-Sn/InSb heterostructures and demonstrates their unprecedented large magnetoresistance.

Findings

Magnetoresistance over 450,000% observed

MR depends on film thickness, angle, and temperature

High-quality epitaxial {eta}-Sn films achieved

Abstract

In this study, we report the epitaxial growth of a series of {\alpha}-Sn films on InSb substrate by molecular beam epitaxy (MBE) with thickness varying from 10 nm to 400 nm. High qualities of the {\alpha}-Sn films are confirmed. An enhanced large magnetoresistance (MR) over 450,000% has been observed compared to that of the bare InSb substrate. Thickness, angle and temperature dependent MR are used to demonstrate the effects of {\alpha}-Sn films on the electrical transport properties.