Pressure-induced reconstructive phase transition in Cd$_3$As$_2$
Monika Gam\.za, Paolo Abrami, Lawrence V D Gammond, Jake Ayres, Israel, Osmond, Takaki Muramtsu, Robert Armstrong, Hugh Perryman, Dominik, Daisenberger, Sitikantha Das, and Sven Friedemann

TL;DR
This study reveals that applying and releasing pressure induces a first-order reconstructive phase transition in Cd$_3$As$_2$, significantly altering its structural and electronic properties, with potential for tuning its electronic states.
Contribution
It demonstrates that pressure induces a sluggish, hysteretic, and reconstructive phase transition in Cd$_3$As$_2$, and shows how annealing improves high-pressure phase crystallinity.
Findings
Pressure causes non-reversible electronic property changes.
High-pressure phase is orthorhombic with specific lattice parameters.
A possible additional phase stabilized by stress may exist.
Abstract
Cadmium arsenide CdAs hosts massless Dirac electrons in its ambient-conditions tetragonal phase. We report X-ray diffraction and electrical resistivity measurements of CdAs upon cycling pressure beyond the critical pressure of the tetragonal phase and back to ambient conditions. We find that at room temperature the transition between the low- and high-pressure phases results in large microstrain and reduced crystallite size both on rising and falling pressure. This leads to non-reversible electronic properties including self-doping associated with defects and a reduction of the electron mobility by an order of magnitude due to increased scattering. Our study indicates that the structural transformation is sluggish and shows a sizable hysteresis of over 1~GPa. Therefore, we conclude that the transition is first-order reconstructive, with chemical bonds being broken and…
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