Polychromatic angle resolved IBIC analysis of silicon power diodes

TL;DR

This study introduces an experimental IBIC methodology and interpretative model to analyze the electronic properties of silicon power diodes, enabling detailed characterization of charge collection, dead layers, and carrier lifetimes.

Contribution

It presents a novel combined experimental and modeling approach for polychromatic angle-resolved IBIC analysis of silicon power diodes.

Findings

Calibration of charge collection efficiency across different conditions

Measurement of dead layer beneath the electrode

Assessment of minority carrier lifetime

Abstract

This paper describes both an experimental methodology based on the Ion Beam Induced Charge (IBIC) technique and the relevant interpretative model, which were adopted to characterize the electronic features of power diodes. IBIC spectra were acquired using different proton energies (from 1.2 to 2.0 MeV), angles of incidence, and applied bias voltages. The modulation of the ion probe range, combined with the modulation of the extensions of the depletion layer, allowed the charge collection efficiency scale to be accurately calibrated, the dead layer beneath the thick (6 micrometer) Al electrode and the minority carrier lifetime to be measured. The analysis was performed by using a simplified model extracted from the basic IBIC theory, which proved to be suitable to interpret the behaviour of the IBIC spectra as a function of all the experimental conditions and to characterize the devices, both for what concerns the electrostatics and the recombination processes.