On-chip Erbium-doped lithium niobate microcavity laser

TL;DR

This paper reports the development of an erbium-doped lithium niobate microdisk laser on a chip, demonstrating C-band laser emission with high quality and thermal stability, advancing integrated photonic applications.

Contribution

It introduces a novel erbium-doped LNOI microdisk laser with high quality factor and dual-wavelength emission, enhancing on-chip photonic integration capabilities.

Findings

Achieved high-Q (~1.05×10^5) erbium-doped LNOI microdisk laser.

Demonstrated C-band laser emission at ~1530 nm and ~1560 nm.

Showed improved thermal stability with 1460 nm pumping.

Abstract

The commercialization of lithium niobate on insulator (LNOI) wafer has sparked significant on-chip photonic integration application due to its remarkable photonic, photoacoustic, electro-optic and piezoelectric nature. A variety of on-chip LNOI-based optical devices with high performance has been realized in recent years. Here we developed 1 mol\% erbium-doped LN crystal and its LNOI wafer, and fabricated an erbium-doped LNOI microdisk with high quality ($ \sim $ 1.05$\times 10^{^5}$ ). C-band laser emission with $ \sim $1530 nm and $ \sim $1560 nm from the high-Q erbium-doped LNOI microdisk was demonstrated both with 974 nm and 1460 nm pumping, and the latter has better thermal stability. This microlaser would play an important role in the photonic integrated circuits of lithium niobate platform.