Exploring In$_2$(Se$_{1-x}$Te$_x$)$_3$ alloys as photovoltaic materials
Wei Li, Xuefen Cai, Nicholas Valdes, Tianshi Wang, William Shafarman,, Su-Huai Wei, Anderson Janotti

TL;DR
This study investigates In$_2$Se$_3$ and its Te-alloys as photovoltaic materials, demonstrating tunable band gaps and high absorption coefficients suitable for solar cell applications through experimental growth and theoretical calculations.
Contribution
It provides new insights into the electronic and optical properties of In$_2$Se$_3$ and its Te-alloys, including band gap tuning and absorption characteristics, expanding their potential for optoelectronic devices.
Findings
Band gap of 1.84 eV for In$_2$Se$_3$ matches experimental data.
Te incorporation tunes the band gap from 1.84 eV to 1.23 eV.
High absorption coefficient comparable to conventional semiconductors.
Abstract
InSe in the three-dimensional (3D) hexagonal crystal structure with space group (-InSe) has a direct band gap of 1.8 eV and high absorption coefficient, making it a promising semiconductor material for optoelectronics. Incorporating Te allows for tuning the band gap, adding flexibility to device design and extending the application range. Here we report the growth and characterization of -InSe thin films, and results of hybrid density functional theory calculations to assess the electronic and optical properties of -InSe and -In(SeTe) alloys. The calculated band gap of 1.84 eV for -InSe is in good agreement with data from the absorption spectrum, and the absorption coefficient is found to be as high as that of direct band gap conventional III-V and II-VI semiconductors.…
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Taxonomy
TopicsChalcogenide Semiconductor Thin Films · Advanced Semiconductor Detectors and Materials · Quantum Dots Synthesis And Properties
