Quantum spin torque driven transmutation of antiferromagnetic Mott insulator

TL;DR

This paper introduces a quantum mechanical approach to spin-transfer torque in antiferromagnetic Mott insulators, revealing how spin-polarized currents can induce ferromagnetic order in these entangled quantum states.

Contribution

It develops a quantum STT model using density matrix renormalization group to describe spin dynamics in strongly correlated antiferromagnetic insulators, surpassing classical models.

Findings

Injection of spin-polarized current induces nonzero localized spins.

Total spin absorption increases with electron-electron repulsion.

Induces a spatially inhomogeneous ferromagnetic phase.

Abstract

The standard model of spin-transfer torque (STT) in antiferromagnetic spintronics considers exchange of angular momentum between quantum spins of flowing electrons and noncollinear-to-them localized spins treated as classical vectors. These vectors are assumed to realize N\'{e}el order in equilibrium, $\uparrow \downarrow \ldots \uparrow \downarrow$, and their STT-driven dynamics is described by the Landau-Lifshitz-Gilbert (LLG) equation. However, many experimentally employed materials (such as archetypal NiO) are strongly electron-correlated antiferromagnetic Mott insulators (AFMI) where localized spins form a ground state quite different from the unentangled N\'{e}el state $|\!\! \uparrow \downarrow \ldots \uparrow \downarrow \rangle$. The true ground state is entangled by quantum spin fluctuations, leading to expectation value of all localized spins being zero, so that LLG dynamics of classical vectors of fixed length rotating due to STT cannot even be initiated. Instead, a fully quantum treatment of both conduction electrons and localized spins is necessary to capture exchange of spin angular momentum between them, denoted as quantum STT. We use a recently developed time-dependent density matrix renormalization group approach to quantum STT to predict how injection of a spin-polarized current pulse into a normal metal layer coupled to AFMI overlayer via exchange interaction and possibly small interlayer hopping -- which mimics, e.g., topological-insulator/NiO bilayer employed experimentally -- will induce nonzero expectation value of AFMI localized spins. This new nonequilibrium phase is a spatially inhomogeneous ferromagnet with zigzag profile of localized spins. The total spin absorbed by AFMI increases with electron-electron repulsion in AFMI, as well as when the two layers do not exchange any charge.