Isoelectronic perturbations to $f$-$d$-electron hybridization and the enhancement of hidden order in URu$_2$Si$_2$
C.T. Wolowiec, N. Kanchanavatee, K. Huang, S. Ran, A.J. Breindel, N., Pouse, Kalyan Sasmal, R.E. Baumbach, G. Chappell, Peter S. Riseborough, and, M.B. Maple

TL;DR
This study investigates how isoelectronic substitution of Os in URu2Si2 enhances hidden order and induces phase transitions, linking increased hybridization of U-5f and transition metal d-electrons to electronic instability and phase stability.
Contribution
It demonstrates that Os substitution enhances hidden order in URu2Si2 by increasing hybridization, providing new insights into the electronic mechanisms behind phase transitions in this material.
Findings
Os substitution expands the lattice and enhances hidden order.
Less external pressure is needed to induce phase transition with Os.
Hybridization between U-5f and transition metal d-electrons increases with Os substitution.
Abstract
Electrical resistivity measurements were performed on single crystals of URuOsSi up to = 0.28 under hydrostatic pressure up to = 2 GPa. As the Os concentration, , is increased, (1) the lattice expands, creating an effective negative chemical pressure (), (2) the hidden order (HO) phase is enhanced and the system is driven toward a large-moment antiferromagnetic (LMAFM) phase, and (3) less external pressure is required to induce the HO to LMAFM phase transition. We compare the , phase behavior reported here for the URuOsSi system with previous reports of enhanced HO in URuSi upon tuning with , or similarly in URuFeSi upon tuning with positive (). It is noted that pressure, Fe substitution, and Os substitution are the only known perturbations that enhance the HO phase and induce the…
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