Drift of sensitive direction of Hall-effect devices in (100)-silicon caused by mechanical shear stress

TL;DR

This paper investigates how mechanical shear stress affects the sensitive direction of Hall-effect devices in (100)-silicon, revealing that shear stress induces linear in-plane magnetic field effects, especially in Vertical Hall devices, and proposes a compensation circuit.

Contribution

It provides a detailed analysis of shear stress effects on Hall devices, including numerical simulations, measurements, and a novel compensation circuit for Vertical Hall sensors.

Findings

Shear stress causes linear in-plane magnetic field effects in Hall devices.

Vertical Hall devices are more affected by shear stress than thin devices.

A compensation circuit is proposed to correct shear-stress induced errors.

Abstract

The output signal of classical symmetrical Hall plates is an odd function of the magnetic field component acting perpendicular to the plate. At weak magnetic field the Hall plate output is linearly proportional to the perpendicular magnetic field. Magnetic field components parallel to the plate may also contribute to the output signal via the planar Hall effect. It leads to even order terms of the in-plane magnetic field in the output signal. At moderate magnetic field the planar Hall effect adds to the output signal a term proportional to the square of the in-plane magnetic field. This paper reports on linear terms of the in-plane magnetic field component to the output signal of Hall-plates, when they are subjected to mechanical shear stress. The effect is small for Hall plates but large for Vertical Hall devices in (100)-silicon. It is fully described by piezo-resistance and piezo-Hall tensors. We present results of numerical simulations and measurements. Thin devices are less affected than thick devices. If magnetic angle sensors are made of Vertical Hall devices, in-plane shear stress leads to a small orthogonality error which - in contrast to the planar Hall effect - cannot be cancelled out by spinning current schemes. We propose a compensation circuit to eliminate this shear-stress induced orthogonality error.