Growth and Characterization of Metalorganic Vapor-Phase Epitaxy-Grown \b{eta}-(AlxGa1-x)2O3/\b{eta}-Ga2O3 Heterostructure Channels

TL;DR

This paper reports the growth and detailed characterization of ta- (AlxGa1-x)2O3/ta-Ga2O3 heterostructures grown by metalorganic vapor-phase epitaxy, demonstrating high electron mobility and promising transistor performance.

Contribution

It introduces a novel heterostructure with delta-doped barriers and provides comprehensive electrical characterization data.

Findings

Hall sheet charge density of 1.06 x 10^{13} cm^{-2}

Electron mobility of 111 cm^2/Vs at room temperature

Transistor peak current of 22 mA/mm and on-off ratio of 8 x 10^6

Abstract

We report on the growth and characterization of metalorganic vapor-phase epitaxy-grown \b{eta}-(AlxGa1-x)2O3/\b{eta}-Ga2O3 modulation-doped heterostructures. Electron channel is realized in the heterostructure by utilizing a delta-doped \b{eta}-(AlxGa1-x)2O3 barrier. Electron channel characteristics are studied using transfer length method, capacitance-voltage and Hall measurements. Hall sheet charge density of 1.06 x 1013 cm-2 and mobility of 111 cm2/Vs is measured at room temperature. Fabricated transistor showed peak current of 22 mA/mm and on-off ratio of 8 x 106. Sheet resistance of 5.3 k{\Omega}/Square is measured at room temperature, which includes contribution from a parallel channel in \b{eta}-(AlxGa1-x)2O3.