Contact resistance assessment and high-frequency performance projection of black phosphorus field-effect transistor technologies

TL;DR

This paper evaluates contact resistance in black phosphorus FETs using a reliable extraction method, and projects high-frequency performance based on these findings, aiding future device optimization.

Contribution

It introduces an efficient contact resistance extraction methodology applicable to various BP FET technologies, considering temperature effects and channel phenomena.

Findings

Good agreement with reference contact resistance values

Method enables direct evaluation of different fabrication steps

High-frequency performance projections are provided

Abstract

In this work, an evaluation of the contact quality of black phosphorus (BP) field-effect transistors (FETs) from different technologies previously reported is performed by means of an efficient and reliable contact resistance extraction methodology based on individual device practical characteristics. A good agreement is achieved between the extracted values with the Y-function method used here and reference values obtained with other methods considering internal values as well as with more expensive methods involving fabricated test structures. The method enables a direct evaluation of different steps in the same technology and it embraces the temperature dependence of the contact characteristics. Channel phenomena have no impact on the extracted contact resistance values. High-frequency performance projections are obtained for fabricated devices based on the extracted contact resistance.