Comparison of phase change process in Si-GST hybrid integrated waveguide and MMI devices
Hanyu Zhang, Xing Yang, Liangjun Lu, Jianping Chen, B. M. A. Rahman,, and Linjie Zhou

TL;DR
This paper compares optical and electrical pulse-induced phase change processes in Si-GST hybrid waveguides, highlighting differences in power, speed, and integration suitability to advance silicon photonics applications.
Contribution
It provides the first systematic comparison of optical versus electrical phase change mechanisms in Si-GST hybrid waveguides through simulations and experiments.
Findings
Optical pulses enable lower power and faster switching.
Electrical pulses are more suitable for large-scale integration.
The study enhances understanding of phase change dynamics in Si-GST devices.
Abstract
In the past decades, silicon photonic integrated circuits (PICs) have been considered as a promising approach to solve the bandwidth bottleneck in optical communications and interconnections. Despite significant advances, large-scale PICs still face a series of technical challenges, such as footprint, power consumption, and routing state storage, resulting from the active tuning methods used to control the optical waves. These challenges can be partially addressed by combining chalcogenide phase change materials (PCMs) such as Ge2Sb2Te5 (GST) with silicon photonics, especially applicable in switching applications due to the nonvolatile nature of the GST. Although GST phase transitions between amorphous and crystalline states actuated by optical and electrical pulses heating have been experimentally demonstrated, there is no direct comparison between them. We carried out simulations and…
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Taxonomy
TopicsPhotonic and Optical Devices · Phase-change materials and chalcogenides · Optical Network Technologies
