Illuminating the electronic properties of WS$_2$ polytypism with electron microscopy
Sabrya E. van Heijst, Masaki Mukai, Eiji Okunishi, Hiroki Hashiguchi,, Laurien I. Roest, Louis Maduro, Juan Rojo, Sonia Conesa-Boj

TL;DR
This study uses advanced electron microscopy and machine learning to analyze mixed 2H/3R WS$_2$ nanostructures, revealing their electronic properties and potential for novel cooling applications in atomically thin devices.
Contribution
It provides the first detailed characterization of mixed 2H/3R WS$_2$ nanostructures, linking morphology with electronic properties using electron microscopy and machine learning.
Findings
Mixed 2H/3R WS$_2$ nanostructures exhibit an indirect band gap of about 1.6 eV.
Presence of energy-gain peaks in EEL spectra suggests potential for cooling applications.
Rich morphology correlates with diverse local electronic properties.
Abstract
Tailoring the specific stacking sequences (polytypes) of layered materials represents a powerful strategy to identify and design novel physical properties. While nanostructures built upon transition-metal dichalcogenides (TMDs) with either the 2H or 3R crystalline phases have been routinely studied, our knowledge of those based on mixed 2H/3R polytypes is far more limited. Here we report on the characterization of mixed 2H/3R free-standing WS nanostructures displaying a flower-like configuration by means of advanced transmission electron microscopy. We correlate their rich variety of shape-morphology combinations with relevant local electronic properties such as their edge, surface, and bulk plasmons. Electron energy-loss spectroscopy combined with machine learning reveals that the 2H/3R polytype displays an indirect band gap with . Further, we…
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Taxonomy
Topics2D Materials and Applications · Quantum Dots Synthesis And Properties · Chalcogenide Semiconductor Thin Films
