The electric pulses induced multi-resistance states in the hysteresis temperature range of 1T-TaS2 and 1T-TaS1.6Se0.4

TL;DR

This study demonstrates that electric pulses can induce multiple resistance states in 1T-TaS2 and 1T-TaS1.6Se0.4 crystals within the hysteresis temperature range, revealing potential for solid-state device applications.

Contribution

It uncovers how electric pulses cause multi-resistance states in these materials, linked to CCDW domain texture rearrangements, a novel insight into their metastable resistive behaviors.

Findings

Electric pulses induce abrupt resistance steps in the materials.

Multiple metastable resistance states are achieved.

The phenomena are linked to CCDW domain texture rearrangements.

Abstract

The electric pulse-induced responses of 1T-TaS2 and 1T-TaS1.6Se0.4 crystals in the commensurate charge-density-wave (CCDW) phase in the hysteresis temperature range have been investigated. We observed that abrupt multiple steps of the resistance are excited by electric pulses at a fixed temperature forming multi metastable like states. We propose that the response of the system corresponds to the rearrangements of the textures of CCDW domains and the multi-resistance states or the nonvolatile resistance properties excited simply by electric pulses have profound significance for the exploration of solid-state devices.