Sensitivity Analysis of a Graphene Field-Effect Transistors by means of Design of Experiments

TL;DR

This paper uses Design of Experiments to analyze how manufacturing tolerances in channel dimensions and oxide thickness affect the electrical performance and reliability of graphene-based field-effect transistors.

Contribution

It introduces a systematic approach to identify key factors influencing GFET performance variations due to manufacturing tolerances.

Findings

Identified the most influential parameters affecting device performance.

Quantified the impact of a 10% variation in channel dimensions and oxide thickness.

Provided insights for optimizing GFET fabrication processes.

Abstract

Graphene, due to its unique electronic structure favoring high carrier mobility, is considered a promising material for use in high-speed electronic devices in the post-silicon electronic era. For this reason, experimental research on graphene-based field-effect transistors (GFETs) has rapidly increased in the last years. However, despite the continuous progress in the optimization of such devices many critical issues remain to be solved such as their reproducibility and performance uniformity against possible variations originated by the manufacturing processes or the operating conditions. In the present work, changes of the ID-VDS characteristics of a Graphene Field-Effect Transistors, caused by a tolerance of 10% in the active channel (i.e. its length and width) and in the top oxide thickness are numerically investigated in order to assess the reliability of such devices. Design of Experiments (DoE) is adopted with the aim to identify the most influential factors on the electrical performance of the device, so that the fabrication process may be suitably optimized.