Strain control of the competition between metallic and semiconducting states in single-layers of TaSe$_3$

TL;DR

This study uses first-principles calculations to explore how strain influences the electronic states of TaSe$_3$ single-layers, revealing a tunable transition between metallic and semiconducting behaviors.

Contribution

It demonstrates strain-induced control over electronic phases in TaSe$_3$ monolayers, a novel insight into 2D transition metal chalcogenides.

Findings

Single layers are metallic despite interlayer interactions.

Uniaxial strain can induce a semiconducting state.

Fermi surface nesting suggests potential electronic instabilities.

Abstract

TaSe$_3$ is a metallic layered material whose structure is built from TaSe$_3$ trigonal prismatic chains. In this work we report a first-principles density functional theory study of TaSe$_3$ single-layers and we find that, despite the existence of non negligible Se...Se interlayer interactions, TaSe$_3$ single layers are found to be metallic. However, an interesting competition between metallic and semiconducting states is found under the effect of strain. The single-layers keep the metallic behaviour under biaxial strain although the nature of the hole carriers changes. In contrast, uniaxial strain along the chains direction induces the stabilization of a semiconducting state. Potential electronic instabilities due to Fermi surface nesting are found for single-layers under either biaxial strain or uniaxial strain along the long (inter-chain) axis of the layers. Bilayers and trilayers have also been considered. The structural and electronic features behind these unexpected observations are analyzed.