Effect of controlled point-like disorder induced by 2.5 MeV electron irradiation on nematic resistivity anisotropy of hole-doped (Ba,K)Fe$_2$As$_2$
M. A. Tanatar, Erik I. Timmons, M. Ko'nczykowski, O. Cavani, Kyuil, Cho, Yong Liu, T. A. Lograsso, R. Prozorov

TL;DR
This study investigates how controlled point-like disorder affects resistivity anisotropy in hole-doped BaKFe$_2$As$_2$, revealing that anisotropy remains consistent regardless of residual resistivity and exhibits unusual temperature dependence linked to nematic fluctuations.
Contribution
It demonstrates that resistivity anisotropy in BaKFe$_2$As$_2$ is unaffected by residual resistivity and introduces a phenomenological model explaining the observed temperature dependence.
Findings
Resistivity anisotropy remains the same across different residual resistivities.
Unusual T-linear anisotropy observed in pristine samples.
Model reproduces the T-linear behavior linked to nematic fluctuations.
Abstract
In-plane anisotropy of electrical resistivity was studied in samples of the hole-doped BaKFeAs in the composition range where anisotropy changes sign. Low-temperature (20~K) irradiation with relativistic 2.5 MeV electrons was used to control the level of disorder and residual resistivity of the samples. Modification of the stress-detwinning technique enabled measurements of the same samples before and after irradiation, leading to conclusion of anisotropic character of predominantly inelastic scattering processes. Our main finding is that the resistivity anisotropy is of the same sign irrespective of residual resistivity, and remains the same in the orthorhombic phase above the re-entrant tetragonal transition. Unusual -linear dependence of the anisotropy is found in pristine samples with…
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