Custom silicon technology for SPAD-arrays with red-enhanced sensitivity and low timing jitter

TL;DR

This paper introduces a new silicon technology enabling SPAD arrays with low timing jitter and high red/near-infrared detection efficiency, advancing single-photon detection applications.

Contribution

The paper presents a novel silicon fabrication process for SPAD arrays with enhanced red sensitivity and reduced timing jitter, improving performance over existing technologies.

Findings

Timing jitter of 95 ps FWHM achieved

Detection efficiency of 70% at 650 nm and 45% at 800 nm

Successful fabrication and characterization of SPAD arrays

Abstract

Single-photon detection is an invaluable tool for many applications ranging from basic research to consumer electronics. In this respect, the Single Photon Avalanche Diode (SPAD) plays a key role in enabling a broad diffusion of these techniques thanks to its remarkable performance, room-temperature operation, and scalability. In this paper we present a silicon technology that allows the fabrication of SPAD-arrays with an unprecedented combination of low timing jitter (95 ps FWHM) and high detection efficiency at red and near infrared wavelengths (peak of 70% at 650 nm, 45% at 800 nm). We discuss the device structure, the fabrication process, and we present a thorough experimental characterization of the fabricated detectors. We think that these long-awaited results can pave the way to new exciting developments in many fields, ranging from quantum optics to single molecule spectroscopy