Heavily $n$-doped Ge: low-temperature magnetoresistance properties

TL;DR

This study investigates the magnetoresistance behavior of heavily phosphorus-doped germanium at low temperatures, revealing an anomalous negative magnetoresistance regime explained by many-body effects within a generalized Drude model.

Contribution

It provides new experimental and theoretical insights into the low-temperature magnetoresistance of heavily doped germanium, highlighting the role of many-body effects.

Findings

Observation of negative magnetoresistance at low temperatures

Explanation of anomalous regime via many-body effects

Insights into magnetoresistance manipulation in doped semiconductors

Abstract

We report here an experimental and theoretical study on the magnetoresistance properties of heavily phosphorous doped germanium on the metallic side of the metal-nonmetal transition. An anomalous regime, formed by negative values of the magnetoresistance, was observed by performing low-temperature measurements and explained within the generalized Drude model, due to the many-body effects. It reveals a key mechanism behind the magnetoresistance properties at low temperatures and, therefore, constitutes a path to its manipulation in such materials of great interest in fundamental physics and technological applications