Skyrmions in an oblique field: A path to novel binary and quaternary memory

TL;DR

This paper introduces a new memory device utilizing skyrmion states in a magnetic island under an oblique magnetic field, enabling multi-state memory with controllable stability and dynamics at room temperature.

Contribution

It presents a novel approach to multi-state memory using skyrmions induced by oblique fields, with detailed modeling of stable states and controllable skyrmion dynamics.

Findings

Multiple stable skyrmion states can be achieved with oblique fields.

Energy barriers between states are tunable via field parameters.

Room-temperature manipulation of skyrmions is feasible.

Abstract

We propose a novel binary and quaternary memory device based upon skyrmion states induced by the oblique field in a square magnetic island. To describe stable states and dynamics of the skyrmion, we employ the lattice model that uses the parameters of a real material and accounts for all relevant interactions. Depending on the orientation of the field, two or four spatially separated energy minima emerge in the oblique field. The energy barriers between the minima can be controlled by the strength and orientation of the magnetic field. We study the dynamics of the skyrmion and show that it can be moved between any two states by application of the field gradient. Islands of thickness of a few tens of atomic layers permit room-temperature manipulation of the proposed device.