Analysis of low-threshold optically pumped III-nitride microdisk lasers

TL;DR

This paper demonstrates room-temperature low-threshold lasing in III-nitride microdisks with InGaN/GaN quantum wells, achieving thresholds as low as 18 kW/cm2 and analyzing factors affecting lasing performance.

Contribution

It provides the first detailed analysis of low-threshold lasing in III-nitride microdisks, including experimental results and comparison with theoretical models.

Findings

Thresholds as low as 18 kW/cm2 achieved

Narrow linewidths of 0.07 nm observed

Lasing sensitivity depends on fabrication process

Abstract

Low-threshold lasing under pulsed optical pumping is demonstrated at room temperature for III-nitride microdisks with InGaN/GaN quantum wells on Si in the blue spectral range. Thresholds in the range of 18 kW/cm2 have been achieved along with narrow linewidths of 0.07 nm and a large peak to background dynamic of 300. We compare this threshold range with the one that can be calculated using a rate equation model. We show that thresholds in the few kW/cm2 range constitute the best that can be achieved with III-nitride quantum wells at room temperature. The sensitivity of lasing on the fabrication process is also discussed.