Compact spin qubits using the common gate structure of fin field-effect transistors

TL;DR

This paper proposes a novel design for spin qubits embedded in FinFET devices that share common gate electrodes, aiming to reduce wiring complexity and enable scalable quantum computing and annealing.

Contribution

It introduces a compact spin qubit architecture using FinFETs with shared gates, utilizing RKKY interactions for qubit coupling, addressing wiring challenges in quantum chip integration.

Findings

Feasibility of spin qubits sharing common FinFET gates.

Potential for high-density qubit integration.

Discussion of applications in quantum annealing.

Abstract

The sizes of commercial transistors are of nanometer order, and there have already been many proposals of spin qubits using conventional complementary metal oxide semiconductor (CMOS) transistors. However, the previously proposed spin qubits require many wires to control a small number of qubits. This causes a significant 'jungle of wires' problem when the qubits are integrated into a chip. Herein, to reduce the complicated wiring, we theoretically consider spin qubits embedded into fin field-effect transistor (FinFET) devices such that the spin qubits share the common gate electrode of the FinFET. The interactions between qubits occur via the Ruderman Kittel Kasuya Yosida (RKKY) interaction via the channel of the FinFET. The compensation for the compact implementation requires high-density current lines in a small space. The possibility of a quantum annealing machine is discussed in addition to the quantum computers of the current proposals.