Micromagnetic instabilities in spin-transfer switching of perpendicular magnetic tunnel junctions

TL;DR

This paper models how micromagnetic instabilities and domain wall dynamics influence spin-transfer switching in perpendicular magnetic tunnel junctions, revealing oscillations, instabilities, and the effects of spin torques on switching behavior.

Contribution

It introduces a collective coordinate model capturing domain wall instabilities and compares it with micromagnetic simulations, advancing understanding of switching dynamics in magnetic tunnel junctions.

Findings

Magnetization oscillations caused by domain wall surface tension.

Switching sensitivity to domain wall position and phase.

Reduced current threshold for switching with spin torques.

Abstract

Micromagnetic instabilities and non-uniform magnetization states play a significant role in spin transfer induced switching of nanometer scale magnetic elements. Here we model domain wall mediated switching dynamics in perpendicularly magnetized magnetic tunnel junction nanopillars. We show that domain wall surface tension always leads to magnetization oscillations and instabilities associated with the disk shape of the junction. A collective coordinate model is developed that captures aspects of these instabilities and illustrates their physical origin. Model results are compared to those of micromagnetic simulations. The switching dynamics is found to be very sensitive to the domain wall position and phase, which characterizes the angle of the magnetization in the disk plane. This sensitivity is reduced in the presence of spin torques and the spin current needed to displace a domain wall can be far less than the threshold current for switching from a uniformly magnetized state. A prediction of this model is conductance oscillations of increasing frequency during the switching process.