MoSi2N4 single-layer: a novel two-dimensional material with outstanding mechanical, thermal, electronic, optical, and photocatalytic properties
A. Bafekry, M. Faraji, Do M. Hoat, M. M. Fadlallah, M. Shahrokhi, F., Shojaei, D. Gogova, and M. Ghergherehchi

TL;DR
MoSi2N4 monolayer is a newly fabricated 2D material with exceptional mechanical, thermal, electronic, optical, and photocatalytic properties, making it promising for various nanodevice applications.
Contribution
This study provides a comprehensive theoretical analysis of MoSi2N4 monolayer's properties, confirming its stability and potential for optoelectronic and photocatalytic applications.
Findings
Dynamically and mechanically stable monolayer confirmed.
Bandgap of 2.35 eV (HSE06) indicating indirect semiconductor.
Good thermoelectric performance with ZT > 1 at high temperatures.
Abstract
Very recently, the two-dimensional (2D) form of MoSi2N4 has been successfully fabricated [Hong et al., Sci. 369, 670 (2020)]. Motivated by theses recent experimental results, herein we investigate the structural, mechanical, thermal, electronic, optical and photocatalytic properties using hybrid density functional theory (HSE06-DFT). Phonon band dispersion calculations reveal the dynamical stability of MoSi2N4 monolayer structure. Furthermore, the mechanical study confirms the stability of MoSi2N4 monolayer. As compared to the corresponding value of graphene, we find the Youngs modulus decreases by 30% while the Poissons ratio increases by 30%. In addition, its work function is very similar to that of phosphorene and MoS2 monolayers. The electronic structure investigation shows the MoSi2N4 monolayer is an indirect bandgap semiconductor. We have determined the bandgap using the HSE06…
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