Atomic Precision Processing of New Materials for Frontier Microelectronic Applications in High Performance Computing and Artificial Intelligence

TL;DR

This paper advocates for advanced atomic precision processing techniques and modeling tools to enhance the development of microelectronic materials for high-performance computing and AI applications.

Contribution

It proposes specific research directions including real-time monitoring and validated modeling tools for atomic precision microelectronics processing.

Findings

Identifies the need for in-situ diagnostic techniques.

Highlights the importance of predictive modeling for processing dynamics.

Emphasizes applications in high-performance computing and AI.

Abstract

This document is a joint response by scientists from the Princeton Plasma Physics Laboratory, IBM T. J. Watson Research Center and Applied Materials, Inc. to the DOE Office of Science (DOE-SC) Request for Information: Basic Research Initiative for Microelectronics (https://www.federalregister.gov/documents/2019/07/12/2019-14869/request-for-information-basic-research-initiative-for-microelectronics). Specifically, we propose DOE-SC to include the following topics in their consideration for future solicitations on Microelectronics: 1) The development of a real-time monitoring and in-situ diagnostic techniques that can provide information on plasma, substrate surface, and interaction between both during atomic precision processing of complex materials for the most advanced microelectronic devices with applications to high performance computing and artificial intelligence, and 2) The development of experimentally validated modeling tools to predict processing dynamics including plasma, chemical and material processes involved.