Seeded growth of high-quality transition metal dichalcogenide single crystals via chemical vapor transport
Hao Li, Junku Liu, Nan Guo, Lin Xiao, Haoxiong Zhang, Shuyun Zhou,, Yang Wu, Shoushan Fan

TL;DR
This paper introduces a seeded chemical vapor transport method to efficiently grow high-quality transition metal dichalcogenide single crystals, overcoming nucleation issues and enabling applications in optoelectronics.
Contribution
The study develops a seed-assisted CVT technique with an inner tube to produce large, high-quality TMD crystals more efficiently than conventional methods.
Findings
Successful growth of millimeter-sized MoSe2 and MoTe2 crystals
Significantly reduced growth time for PtSe2 crystals
High photoresponse and rapid switching in MoSe2 phototransistor
Abstract
Transition metal dichalcogenides (TMDs) are van der Waals layered materials with sizable and tunable bandgaps, offering promising platforms for two-dimensional electronics and optoelectronics. To this end, the bottleneck is how to acquire high-quality single crystals in a facile and efficient manner. As one of the most widely employed method of single-crystal growth, conventional chemical vapor transport (CVT) generally encountered problems including the excess nucleation that leads to small crystal clusters and slow growth rate. To address these issues, a seed crystal is introduced to suppress the nucleation and an inner tube is adopted as both a separator and a flow restrictor, favoring the growth of large-size and high-quality TMD single crystals successfully. Three examples are presented, the effective growth of millimeter-sized MoSe2 and MoTe2 single crystals, and the greatly…
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