Dependency of high-speed write properties on external magnetic field in spin-orbit torque in-plane magnetoresistance devices

TL;DR

This paper investigates how external magnetic fields influence the write properties of in-plane magnetization spin-orbit torque magnetoresistance devices, providing insights into their behavior for next-generation magnetic memory applications.

Contribution

It compares the external magnetic field dependence of write current density and switching probability in two types of in-plane SOT-MR devices, a novel experimental analysis.

Findings

External magnetic field affects write current thresholds.

Switching probability varies with magnetic field strength.

Differences observed between device types under magnetic influence.

Abstract

Spin-orbit torque (SOT) magnetoresistance (MR) devices have attracted attention for use in next-generation MR devices. The SOT devices are known to exhibit different write properties based on the relative angle between the magnetization direction of the free layer and the write-current direction. However, few studies that compare the write properties of each type have been reported. In this study, we measured the external perpendicular-magnetic field dependence of the threshold write current density and the write current switching probability using two types of in-plane magnetization SOT-MR devices.