Van der Waals Layered Ferroelectric CuInP2S6: Physical Properties and Device Applications
Shuang Zhou, Lu You, Hailin Zhou, Yong Pu, Zhigang Gui, Junling Wang
TL;DR
This paper reviews the physical properties and potential device applications of CuInP2S6, a van der Waals layered ferroelectric material with robust room-temperature ferroelectricity, highlighting its diverse properties and future research directions.
Contribution
It provides a comprehensive overview of CuInP2S6's properties and discusses its potential applications and future research challenges.
Findings
CuInP2S6 exhibits stable ferroelectricity at room temperature.
The material shows promising dielectric and piezoelectric properties.
Potential applications include ferroelectric devices and sensors.
Abstract
Copper indium thiophosphate, CuInP2S6, has attracted much attention in recent years due to its van der Waals layered structure and robust ferroelectricity at room temperature. In this review, we aim to give an overview of the various properties of CuInP2S6, covering structural, ferroelectric, dielectric, piezoelectric and transport properties, as well as its potential applications. We also highlight the remaining questions and possible research directions related to this fascinating material and other compounds of the same family.
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Taxonomy
Topics2D Materials and Applications · Chalcogenide Semiconductor Thin Films · Perovskite Materials and Applications